High-Purity ALD Precursors & Sputtering Targets for Thin Film Deposition

Kojundo offers high-purity ALD precursor materials, supported by Mitsui Plastics with North American supply and technical support.

Key material categories include:

• Amides and imides (e.g., TEMAZ, TDMAH, TBTEMT)
• Halide-based precursors (e.g., ZrCl₄, HfCl₄, WCl₆, AlCl₃)
• Cyclopentadienyl-based precursors for advanced thin film deposition

Designed for atomic layer deposition (ALD), Kojundo’s precursor materials enable precise thin film growth with high purity and process control. Applications include high-k dielectrics, electrode formation, and advanced semiconductor device fabrication.

Advanced Cyclopentadienyl (Cp)-Based ALD Precursors 

• Designed for high-purity thin film deposition with liquid-phase precursors 
• Enables uniform deposition on large substrates 
• Low carbon contamination and high crystallinity

Example materials: 

• In(EtCp): for In₂O₃, InN 
• GaCp*: for Ga₂O₃, GaN 
• Zn(Cp)₂: for ZnO 

Deposition Capabilities 

• Atomic layer control of film thickness 
• High-k dielectric and electrode material applications 
• Suitable for advanced semiconductor and functional films 

Kojundo materials support a wide range of thin film deposition applications across semiconductor, electronics, and energy industries. 

• Semiconductor Devices (DRAM, FRAM, MEMS)
• HDD & Magnetic Devices (MRAM, TMR/GMR)
• Quantum Computing & AI Servers
• Rechargeable Batteries & Solar Cells
• Transparent Electrodes & Piezoelectric Layers