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High-Purity Sputtering Targets & CVD/ALD Precursors for Advanced Applications

Mitsui Plastics

High-Purity Sputtering Targets & CVD/ALD Precursors for Advanced Applications

Kojundo Chemical Laboratory Co., Ltd. has been a pioneer in high-purity materials since 1962, specializing in advanced thin film deposition technologies. Their portfolio includes sputtering targets, CVD precursors, and ALD materials engineered for precision, purity, and performance across industries such as semiconductor devices, data storage technologies, quantum computing, AI systems, energy storage, and advanced thin film coatings.

Mitsui Plastics, Inc. is the North American supplier and distributor of Kojundo sputtering targets and thin film materials, providing local access, technical support, and supply chain expertise. We support customers with custom sputtering targets, high-purity materials, and tailored solutions for semiconductors and advanced thin film applications.

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Sputtering Targets

Metal Targets

  • High-Purity Metals: Al, Co, Cu, Fe, Mg, Mn, Sn
  • High Melting-Point Alloys: Cr, Mo, Nb, Ta, Ti, V, W
  • Magnetic Alloys: Co-Fe-B, Co-Pt, Fe-Pt
  • Non-Magnetic & Heusler Alloys: Mn-Al, Mn-Bi, Mn-Ga, Mn-Ir, Mn-Si
  • Noble Metal Alloys: Au, Ag, Pt, Pd

Inorganic Compound Targets

  • Oxides: Al₂O₃, MgO, SiO₂, TiO₂, ZnO, La₂O₃, ITO, PZT, STO, LiCoO₂
  • Carbides: SiC, B₄C, WC
  • Nitrides, Sulfides, Fluorides, Phosphides, Selenides

Complex Targets

  • Metal Phases: Co-Cr-Pt, Fe-Ni, Fe-Pt
  • Non-Metal Phases: Al₂O₃, MgO, SiO₂

Custom Capabilities *Depends on the product.

Please contact us separately.

  • Sizes: Circular (Φ50.8–533.4 mm), Rectangular (127×304.8 mm to 152.4×508 mm)
  • Thickness: t3–t10 mm
  • Purity: Up to 6N (99.9999%)
  • Backing Plates: Custom fabrication using Cu alloys, stainless steel, Al, Mo, Ti
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CVD & ALD Materials

CVD Precursors

Used for interlayer dielectrics and electrode formation:

  • Silicon & Boron Compounds: TEOS, TMB, TEB, TMP, TMOP®, TEOP®
  • High-k / Ferroelectric Materials: Ta(OC₂H₅)₅ (PET), Hf(O-t-C₄H₉)₄ (HTB), Pb(C₁₁H₁₉O₂)₂, Ru(C₅H₄C₂H₅)₂

ALD Precursors

For atomic-level control of thin film growth:

  • Amides & Imides: TEMAZ, TDMAH, TBTEMT, Taimata®
  • Halides: ZrCl₄, HfCl₄, WCl₆, AlCl₃, MoCl₅

Container Options

  • Cylinders for bulk supply
  • Glass ampoules for small quantities

Applications

  • Semiconductor Devices (DRAM, FRAM, MEMS)
  • HDD & Magnetic Devices (MRAM, TMR/GMR)
  • Quantum Computing & AI Servers
  • Rechargeable Batteries & Solar Cells
  • Transparent Electrodes & Piezoelectric Layers
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Cyclopentadienyl-Based ALD Precursors

Kojundo Chemical Laboratory is actively developing cyclopentadienyl (Cp)-based ALD precursors to meet the growing demand for high-purity, liquid-phase materials suitable for large-area thin film deposition. These precursors are designed for atomic layer deposition of oxides, nitrides, and metals with exceptional control and purity.

Featured Cp-Based Precursors

  • In(EtCp) (Ethylcyclopentadienyl Indium)
    • Deposits: In₂O₃, InN
    • Appearance: Liquid
    • Highlights: Stoichiometric films with <1 ppm carbon impurities
  • GaCp* (Pentamethylcyclopentadienyl Gallium)
    • Deposits: Ga₂O₃, GaN
    • Appearance: Liquid
    • Highlights: High-purity films at 200℃ growth temperature
  • Zn(Cppm)₂ (Bis(n-propyltetramethylcyclopentadienyl) Zinc)
    • Deposits: ZnO
    • Appearance: Liquid
    • Highlights: High-purity films at 200℃ growth temperature

Additional Cp-Based Precursors in Development

  • Ru(EtCp)₂ – For Ru metal
  • Co(EtCp)₂ – For Co metal
  • Sn Complex – For SnOx
  • W & Au Complexes – For metal deposition (non-Cp exception for Au)

Technical Advantages

  • Liquid-phase Cp ligands enable uniform deposition on large substrates
  • Engineered for low carbon contamination and high film crystallinity
  • Supported by Clausius-Clapeyron vapor pressure data and DSC analysis
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Why Choose Kojundo with Mitsui Plastics

Kojundo’s material expertise combined with Mitsui Plastics’ North American support provides a reliable solution for high-performance thin film applications. 

  • High purity materials up to 6N (99.9999%) 
  • Broad portfolio of metals, alloys, and compound materials 
  • Custom sputtering targets and ALD precursor solutions 
  • Local supply, technical support, and supply chain coordination 

Get in Touch

Request a quote or discuss your application with our team to identify the right sputtering targets or ALD precursors.

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